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| Composite Transistors XN1871 Silicon N-channel junction FET Unit: mm For amplification of the low frequency 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 5 0.650.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Soure-coupled FETs) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 4 0.95 3 2 0.3 -0.05 0.40.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SK198 x 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Drain to source voltage Rating Gate to drain voltage of Drain current element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VDSX VGDO ID IG PT Tch Tstg (Ta=25C) Ratings 30 -30 20 10 300 150 -55 to +150 Unit V V mA mA mW C C 1 : Gate (Tr1) 2 : Gate (Tr2) 3 : Drain (Tr2) 0 to 0.1 0.1 to 0.3 4 : Source 5 : Drain (Tr1) EIAJ : SC-74A Mini Type Pakage (5-pin) Marking Symbol: 5T Internal Connection 5 4 3 2 FET 1 1 FET 2 s Electrical Characteristics Parameter Drain current Gate cutoff current Gate to source cutoff voltage Mutual conductance Common source short-circuit input capacitance Common source reverse transfer capacitance Noise voltage (Ta=25C) Symbol IDSS IGSS VGSC gm gm Ciss Crss NV Conditions VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 VDS = 10V, ID = 10A VDS = 10V, ID = 0.5mA, f = 1MHz VDS = 10V, VGS = 0V, f = 1MHz VDS = 10V, VGS = 0V, f = 1MHz VDS = 10V, VGS = 0V, f = 1MHz VDS = 30V, ID = 1mA, GV = 80dB Rg = 100k, Function = FLAT - 0.1 4 4 12 14 3.5 60 min 0.5 typ max 12 -100 -1.5 Unit mA nA V mS mS pF pF mV +0.1 1.450.1 s Features 1 Composite Transistors PT -- Ta 500 8 Ta=25C 7 XN1871 ID -- VDS 9.6 VDS=10V 8.0 ID -- VGS Total power dissipation PT (mW) 400 Drain current ID (mA) VGS=0V 5 4 -0.1V 3 2 1 -0.2V -0.3V -0.4V Drain current ID (mA) 6 6.4 300 4.8 Ta=75C 3.2 25C 1.6 -25C 200 100 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 -1.0 -0.8 -0.6 -0.4 -0.2 0 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) gm -- VGS 20 18 VDS=10V Ta=25C 20 18 gm -- ID VDS=10V Ta=25C Ciss, Coss -- VDS Common source short-circuit input capacitance, Ciss, Coss (pF) Common source short-circuit output capacitance 10 VGS=-3V f=1MHz Ta=25C 8 Mutual conductance gm (mS) 16 14 12 10 8 6 4 2 0 -0.8 2.0mA IDSS=5.0mA Mutual conductance gm (mS) 16 14 12 10 8 6 4 2 2.0mA IDSS=5.0mA 6 Ciss 4 2 Coss -0.6 -0.4 -0.2 0 0 0 2 4 6 8 0 1 2 3 5 10 20 30 50 100 Gate to source voltage VGS (V) Drain current ID (mA) Drain to source voltage VDS (V) Common source reverse transfer capacitance Crss (pF) Crss -- VDS 5 VGS=3V f=1MHz Ta=25C 4 NF -- f 12 VDS=10V ID=5.2mA Ta=25C 10 Noise figure NF (dB) 8 3 6 2 4 Rg=500 2 1k 1 0 1 2 3 5 10 20 30 50 100 0 10 100 1k 10k 100k Drain to source voltage VDS (V) Frequency f (Hz) 2 |
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